> To design the transistor dc schematic, we are using GPDK 180 nm library:
- Select 'nmosrf' from the palette, and select width to 5u (micron) Finger as shown below:
- Add technology netlist as it is necessary to simulate your circuit:
- Add DC simulation to ensure (shown below):
- Go to sources - freq. domain on left panel, and add DC voltage:
- Connect voltage source (-) to ground, and voltage source (+) to gate of nMOS. Name the gate input as 'G' as shown below:
- Ground the Source and Body as below. Connect the Drain with current probe, and ground the other end of ID - drain current probe.
 |
| Edit Simulation Settings. |
 |
| Simulation Settings - Standard_ic. |
 |
| Naming Drain as D. |
 |
| Naming current probe as ID. |
- Renaming drain-source voltage to VDS, and gate voltage to VB. Also, add variable as shown below:
- Add parameter sweep to add sweep and simulation variables for the rectangular simulation plot (shown below):
- Adding VDS to the plot (click and name x-axis as VDS which is already mentioned in parameter sweep above):
 |
| Adding more precise digits. |
 |
| Final Simulation with line marker to observe voltage and current values. |
.jpg)
Final Year Project Ideas for ECE Students is relevant to RF chip design because transistor DC simulation, circuit modeling, and VLSI design involve practical electronics concepts. Projects in this area can help ECE students explore semiconductor devices, circuit simulation, and integrated-circuit design workflows.
ReplyDeleteECE Final Year Projects also fits the article’s focus on designing and simulating an nMOS transistor using the GPDK 180 nm library. Working with DC operating points, voltage sources, current probes, and transistor characteristics provides a practical foundation for electronics and chip-design projects.
ReplyDelete